Thin film transistor substrate and fabricating method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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C257S052000, C257S057000, C349S046000

Reexamination Certificate

active

06921917

ABSTRACT:
A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.

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patent: 2001058176 (2001-07-01), None
S.J. Hillenius, “MOSFETs and Related devices” in “Modern Semiconductor Devices”, Ed. S.M. Sze, ISBN 0-471-15237-4 (1998, John Wiley and Sons, Inc); in particular p. 164-168.

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