Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-07-26
2005-07-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S052000, C257S057000, C349S046000
Reexamination Certificate
active
06921917
ABSTRACT:
A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.
REFERENCES:
patent: 4654777 (1987-03-01), Nakamura
patent: 5453857 (1995-09-01), Takahara
patent: 5573964 (1996-11-01), Hsu et al.
patent: 5897182 (1999-04-01), Miyawaki
patent: 5982467 (1999-11-01), Lee
patent: 6111627 (2000-08-01), Kim et al.
patent: 6274884 (2001-08-01), Lee et al.
patent: 2001058176 (2001-07-01), None
S.J. Hillenius, “MOSFETs and Related devices” in “Modern Semiconductor Devices”, Ed. S.M. Sze, ISBN 0-471-15237-4 (1998, John Wiley and Sons, Inc); in particular p. 164-168.
Choi Seung Kyu
Kim Jong Woo
Soh Jae Moon
LG. Philips LCD Co. Ltd.
McKenna Long & Aldridge LLP
Mondt Johannes
LandOfFree
Thin film transistor substrate and fabricating method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor substrate and fabricating method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor substrate and fabricating method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3392611