Method and apparatus providing MRAM devices with fine tuned...

Details Method and apparatus providing MRAM devices with fine tuned... Method and apparatus providing MRAM devices with fine tuned...

2005-04-26

2005-04-26

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S444000, C365S055000

Reexamination Certificate

active

06885073

ABSTRACT:
A MRAM cell structure is disclosed as containing an additional ferromagnetic layer and coupling layer between the third ferromagnetic layer and the anti-ferromagnetic layer. The additional ferromagnetic layer affects the demagnetization field to which the free layer is exposed, thereby reducing any bias introduced to the free layer. Further, by adjusting the thickness of the additional ferromagnetic layer, the effects of Neel coupling on the free layer are reduced.

REFERENCES:
patent: 6233172 (2001-05-01), Chen et al.
patent: 6358756 (2002-03-01), Sandhu et al.
patent: 6376260 (2002-04-01), Chen et al.
patent: 6392922 (2002-05-01), Liu et al.
patent: 6418048 (2002-07-01), Sin et al.
patent: 6735112 (2004-05-01), Zhu et al.
patent: 6751074 (2004-06-01), Inomata et al.

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