Optics: measuring and testing – For light transmission or absorption
Reexamination Certificate
2005-04-19
2005-04-19
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
For light transmission or absorption
C356S601000, C356S364000, C356S369000
Reexamination Certificate
active
06882424
ABSTRACT:
An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.
REFERENCES:
patent: 4468136 (1984-08-01), Murphy et al.
patent: 4513384 (1985-04-01), Rosencwaig
patent: 4521118 (1985-06-01), Rosencwaig
patent: 4522510 (1985-06-01), Rosencwaig et al.
patent: 4579463 (1986-04-01), Rosencwaig et al.
patent: 4632561 (1986-12-01), Rosencwaig et al.
patent: 4634290 (1987-01-01), Rosencwaig et al.
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4652757 (1987-03-01), Carver
patent: 4710030 (1987-12-01), Tauc et al.
patent: 4750822 (1988-06-01), Rosencwaig et al.
patent: 4795260 (1989-01-01), Schuur et al.
patent: 4854710 (1989-08-01), Opsal et al.
patent: 4999014 (1991-03-01), Gold et al.
patent: 5042951 (1991-08-01), Gold et al.
patent: 5074669 (1991-12-01), Opsal
patent: 5159412 (1992-10-01), Willenborg et al.
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5228776 (1993-07-01), Smith et al.
patent: 5408327 (1995-04-01), Geiler et al.
patent: 5657754 (1997-08-01), Rosencwaig
patent: 5978074 (1999-11-01), Opsal et al.
patent: 6191846 (2001-02-01), Opsal et al.
patent: 6320666 (2001-11-01), Opsal et al.
patent: 0 432 963 (1991-06-01), None
patent: WO 8303303 (1983-09-01), None
A. Rosencwaig, “Depth Profiling of Intergrated Circuits with Thermal Wave Electron Microscopy, ”Electronic Letters,20th Nov. 1980, vol. 16, No. 24, pp. 928-930
J. Opsal et al., “Thermal and plasma wave depth profiling in silicon, ”Appl. Phys. Lett.,Sep. 1, 1985, vol. 47, No. 5, pp. 498-500.
A. Rosencwaig, Chp. 17, 18, and 21Photoacoustics and Photoacoutics Spectroscopy,1980, pp. 207-244 (Chapts. 17-18) and 270-284 (Chapt. 21).
X.D. Wu et al., “Photothermal microscope for high-Tcsuperconductors and charge density waves, ”Rev. Sci. Instrum.,Nov. 1993, vol. 64, No. 11, pp. 3321-3327.
J.T. Fanton et al., “High-sensitivity laser probe for photothermal Measurements, ”Appl. Phys. Lett.,Jul. 13, 1987, vol. 51, No. 2, pp. 66-68.
J.T. Fanton et al., “Low-Temperature Photothermal Measurements of High TcSuperconductors, ”The Review of Progress in Quantitative Nondestructive Evaluation(Reprint G.L. Report No. 4728 [Aug. 1990]) , Presented Jul.
B.C. Forget et al., “Electronic diffusivity measurement in silicon by photothermal microscopy, ”Appl. Phys. Lett.,Aug. 1996, vol. 69, No. 8, pp. 1107-1109.
J.T. Fanton et al., “Multiparameter measurements of thin films using beam-profile reflectometry, ”Journal of Applied Physics,.
A.M. Mansanares et al., “Temperature field determination of InGaAsP/InP lasers by photothermal microscopy: Evidence for weak nonradiative processes at the facets,”Appl. Phys. Lett., vol. 64 (1), Jan. 3, 1994, pp. 4-6.
Jian-Chun Cheng et al., “Theoretical studies of pulsed photothermal phenomena in semiconductors,”J. Appl. Phys., vol. 74, No. 9, Nov. 1, 1993, pp. 5718-5725.
Chen Li
Opsal Jon
Punnoose Roy M.
Stallman & Pollock LLP
Therma-Wave, Inc.
Toatley , Jr. Gregory J.
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