Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-07-05
2005-07-05
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S042000, C257S613000, C365S100000, C365S163000, C365S154000, C365S175000, C438S102000, C438S400000
Reexamination Certificate
active
06914255
ABSTRACT:
A memory may have access devices formed using a chalcogenide material. The access device does not induce a snapback voltage sufficient to cause read disturbs in the associated memory element being accessed. In the case of phase change memory elements, the snapback voltage may be less than the threshold voltage of the phase change memory element.
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Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” presented at 2003 19thIEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 26-20, 2003.
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Flynn Nathan J.
Forde Remmon R.
Ovonyx Inc.
Trop Pruner & Hu P.C.
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