Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-05-03

2005-05-03

Zarneke, David (Department: 2829)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Reexamination Certificate

active

06887771

ABSTRACT:
The invention provides a semiconductor device and a method of fabricating the same in which the side faces and chip edge of an IC chip obtained by dicing a semiconductor wafer are coated with an overcoat film. A method of fabricating a semiconductor device in accordance with the present invention includes: 1) preparing a semiconductor wafer on which semiconductor elements are formed, 2) dicing the semiconductor wafer along scribed lines at a depth of 20 μm or more to form grooves 4-along the scribed lines, 3) forming an overcoat film on the necessary parts of the semiconductor wafer including the surfaces of the grooves, 4) optionally forming a thick electrode, and 5) dividing the semiconductor wafer into individual IC chips and chip size packages by dicing the semiconductor wafer along the grooves.

REFERENCES:
patent: 5897337 (1999-04-01), Kata et al.
patent: 5982042 (1999-11-01), Nakamura
patent: 6656758 (2003-12-01), Shinogi et al.
patent: 54-45570 (1979-04-01), None
patent: 11-121507 (1999-04-01), None
patent: 2001-7052 (2001-01-01), None

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