Semiconductor device with photosensitivity

Details Semiconductor device with photosensitivity Semiconductor device with photosensitivity

1990-06-26

1992-07-14

James, Andrew J.

357 2, 357 4, 357 2314, 357 30, H01L 2701, H01L 4500, H01L 2714

Patent

active

051307731

ABSTRACT:
A photosensor with improved performance is provided with a gate electrode structure for a field effect transistor that includes a semiconductor layer photosensitivity. The gate electrode can be constituted with a kind of metal or a low resistance semiconductor in conjunction with a semiconductor area with photosensitivity adjacent thereto. As a photosensitive semiconductor, amorphous silicon can be used because of its comparatively easy manufacturing method and its high sensitivity. As a field effect transistor, a thin film transistor of amorphous silicon can be used to correspond to the demand for making transistors over a large area. A MOSFET is preferably used as a field effect transistor for the improvement of sensitivity and speed of the sensor.

REFERENCES:
patent: 4077044 (1978-02-01), Hayashi
patent: 4598305 (1986-07-01), Chang et al.
patent: 4740823 (1988-04-01), Thompson
patent: 4845355 (1989-07-01), Nakagawa et al.
patent: 4951113 (1990-08-01), Huang et al.
patent: 4956680 (1990-09-01), Tanaka et al.

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