Thin film transistor

Details Thin film transistor Thin film transistor

2005-01-18

2005-01-18

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S302000, C257S201000

Reexamination Certificate

active

06844577

ABSTRACT:
Methods of forming thin film transistors, and transistors therefrom, are provided where at least one of the source or drain region is conductively doped while conductivity doping of the channel region is prevented without any masking by any separate masking layer. Methods include, providing a substrate having a conductive node; providing a first dielectric layer, a gate layer over the first layer and a second dielectric layer over the gate layer; providing a contact opening through the first and second layers and the gate layer, the opening defining projecting sidewalls; providing a gate dielectric layer within the opening; providing a layer of semiconductive material over the second layer, against the gate dielectric layer and in electrical communication with the node; the material defining a channel region; and conductively doping the semiconductive material layer lying outwardly of the contact opening to form one of a source region or a drain region.

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