Method of forming a capacitor

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S255000, C438S296000

Reexamination Certificate

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06919257

ABSTRACT:
A method of forming a capacitor is disclosed. The method includes forming a first electrode having a non-smooth surface and selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a second electrode, and forming a dielectric between the first and second electrodes.

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