Method for manufacturing semiconductor device, and method...

Details Method for manufacturing semiconductor device, and method... Method for manufacturing semiconductor device, and method...

2005-07-12

2005-07-12

Thai, Luan (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S455000, C438S460000, C438S667000

Reexamination Certificate

active

06916725

ABSTRACT:
To form through electrodes effectively without deteriorating the quality of the through electrodes, a semiconductor substrate is spin etched at its back surface, thereby thinning down the semiconductor substrate, making opening sections penetrate the semiconductor substrate, and forming through holes in the semiconductor substrate. Tips of embedded electrodes are exposed out of the through holes in the semiconductor substrate, to form through electrodes.

REFERENCES:
patent: 6322903 (2001-11-01), Siniaguine et al.
patent: 6429096 (2002-08-01), Yanagida
patent: 6498381 (2002-12-01), Halahan et al.
patent: 6800930 (2004-10-01), Jackson et al.

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