Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-03-15
2005-03-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S422000, C257S425000, C257S427000, C365S158000, C438S003000
Reexamination Certificate
active
06867468
ABSTRACT:
A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.
REFERENCES:
patent: 6509621 (2003-01-01), Nakao
patent: 6525957 (2003-02-01), Goronkin et al.
Bhattacharyya Manoj
Sharma Manish
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