Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-07-05
2005-07-05
Evans, Jefferson (Department: 2652)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C360S324100, C360S324200
Reexamination Certificate
active
06914757
ABSTRACT:
A magnetoresistance effect element includes a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer formed between the magnetization fixed layer and the magnetization free layer. The magnetoresistance effect element has a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, the resistance being detected when a sense current is applied to the film planes of the magnetization fixed layer, the non-magnetic intermediate layer, and the magnetization free layer in a direction substantially perpendicular thereto. The film area of the non-magnetic intermediate layer is smaller than the film area of each of the magnetization fixed layer and the magnetization free layer, the magnetoresistance effect element has a single conductive part with a film area smaller than the film area of each of the magnetoresistance effect element, and the magnetoresistance effect element is configured such that the sense current flows only through the single conductive part.
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Kamiguchi Yuzo
Nagata Tomohiko
Yoda Hiroaki
Yuasa Hiromi
Evans Jefferson
Oblon, Spivak, McClellandm Maier & Neustadt, P.C.
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