Method of making an ultimate low dielectric device

Details Method of making an ultimate low dielectric device Method of making an ultimate low dielectric device

2005-07-05

2005-07-05

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S112000, C438S124000, C438S126000, C438S411000, C438S421000, C438S422000, C438S619000, C438S624000, C438S637000, C438S902000, C438S958000, C438S976000

Reexamination Certificate

active

06913946

ABSTRACT:
A method of making a semiconductor device comprising: providing a semiconductor substrate having a plurality of discrete devices formed therein, and a plurality of metal layers and support layers, the support layers comprising an uppermost support layer and other support layers, and wherein each metal layer has an associated support layer having at least a portion underlying the metal layer, and wherein the plurality of metal layers includes an uppermost metal layer including a sealing pad having an opening therethrough, and a passivation layer having at least one opening therein exposing a portion of the sealing pad including the opening therethrough, and the uppermost support layer having a portion exposed through the opening in the sealing pad; exposing the uppermost support layer to an etching material through the opening in the sealing pad and etching away the support layers; and sealing the opening in the sealing pad.

REFERENCES:
patent: 5953626 (1999-09-01), Hause et al.
patent: 6057224 (2000-05-01), Bothra et al.
patent: 6218282 (2001-04-01), Buynoski
patent: 6245658 (2001-06-01), Buynoski
patent: 6413852 (2002-07-01), Grill et al.
patent: 6495445 (2002-12-01), Clevenger et al.
patent: 6642138 (2003-11-01), Pan et al.
patent: 6713835 (2004-03-01), Horak et al.
patent: 2001/0014526 (2001-08-01), Clevenger et al.
patent: 2003/0127740 (2003-07-01), Hsu et al.

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