Method for fabricating a silicon thin-film

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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Details

C427S552000, C427S553000, C427S256000, C427S271000, C427S272000, C427S282000

Reexamination Certificate

active

06846513

ABSTRACT:
Provided is a method of forming a silicon thin-film which comprises a step of arranging in one or more parts of a liquid arranging surface liquid which contains a silicide comprising ring silane and/or a derivative thereof, such ring silane comprising silicon and hydrogen, and a step of forming a silicon thin-film by vaporizing silicide from liquid and supplying the silicide to a thin-film-forming surface.

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patent: A-2000-228369 (2000-08-01), None
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patent: WO 0059015 (2000-10-01), None
patent: WO 0059044 (2000-10-01), None

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