Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-01-11
2005-01-11
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S716000, C438S689000
Reexamination Certificate
active
06841485
ABSTRACT:
The present invention provides a semiconductor device manufacturing line for applying a series of processes on a semiconductor substrate, and forming an integrated circuit on the semiconductor substrate by employing a semiconductor wafer having a diameter of 6 inches (150±3 mm: SEAJ specification) or less for the semiconductor substrate. This manufacturing line comprises two sub-lines conforming to the same specifications, each of these sub-lines is composed of a series of processing units including a film forming unit, a pattern exposure unit, an etching unit, and a test unit. In at least one pattern exposure unit and one etching unit, fine processing of 0.3 μm or less can be performed.
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Asakawa Teruo
Inoue Jun-ichi
Sugiyama Kazuhiko
Nguyen Thinh T
Tokyo Electron Limited
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