Magneto-resistive devices

Details Magneto-resistive devices Magneto-resistive devices

2005-07-12

2005-07-12

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S421000, C365S008000, C365S158000, C330S062000, C324S207210, C324S252000, C438S048000

Reexamination Certificate

active

06917088

ABSTRACT:
A magneto-resistive device has a high reproducing output and is suitable for use as a CPP-GMR device. The magneto-resistive device has a first magnetic layer, a second magnetic layer, and a non-magnetic spacer formed between the first and second magnetic layers. The first magnetic layer contains a magnetic material whose conduction electrons belong to a first energy band, and the second magnetic layer contains a magnetic material whose conduction electrons belong to a second energy band. The first and second energy bands are attributable to orbitals of the same kind, thereby increasing the ratio of change in magnetoresistance and adjusting the electric resistance.

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