Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-07-05
2005-07-05
Nguyen, Viet Q. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185190, C365S185210, C365S185220, C365S185230, C365S185240, C365S185290, C365S185090
Reexamination Certificate
active
06914817
ABSTRACT:
Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.
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Nguyen Viet Q.
Parsons Hsue & de Runtz LLP
SanDisk Corporation
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