Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-01-25
2005-01-25
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000, C257S739000, C257S741000, C257S750000, C257S786000
Reexamination Certificate
active
06847117
ABSTRACT:
There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer provided on the surface of the semiconductor substrate, a bump formed on a surface of the electrode pad through an intermediate layer, and a resin insulating film formed in at least a peripheral portion of the bump to cover an interface of the bump and the intermediate layer which is exposed to a side surface of the bump.
REFERENCES:
patent: 6404051 (2002-06-01), Ezawa et al.
patent: 5-218039 (1993-08-01), None
patent: 2000-21914 (2000-01-01), None
Flynn Nathan J.
Forde Remmon R.
Merchant & Gould P.C.
Rohm & Co., Ltd.
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