Method for removing photoresist

Details Method for removing photoresist Method for removing photoresist

2005-01-25

2005-01-25

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S695000

Reexamination Certificate

active

06846748

ABSTRACT:
A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is irradiated with UV light, and the remaining photoresist and polymer are stripped with stripping solvents after UV irradiation.

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S.Wolf & R.N. Tauber, “Silicon Processing for the VLSI Era”, vol. 1, Lattice Press, 1995, pp. 439-442.

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