CMP apparatus and method for polishing multiple...

Details CMP apparatus and method for polishing multiple... CMP apparatus and method for polishing multiple...

2005-09-27

2005-09-27

Kunemund, Robert (Department: 1722)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S695000

Reexamination Certificate

active

06949466

ABSTRACT:
A chemical mechanical polishing (CMP) apparatus and method for sequentially polishing multiple semiconductor wafers on a single polishing pad utilizes multiple slurry delivery lines to supply one or more types of polishing solutions to the surface of the polishing pad. The slurry delivery lines are positioned to direct the polishing solution or solutions to different polishing positions of the polishing pad. The use of multiple slurry delivery lines allows the CMP apparatus to polish the semiconductor wafers at different polishing positions of the polishing pad using different types of polishing solutions.

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