Organic thin-film transistor manufacturing method, organic...

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C257SE51005, C257SE51006, C257SE51010

Reexamination Certificate

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06913944

ABSTRACT:
An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.

REFERENCES:
patent: 5705826 (1998-01-01), Aratani et al.
patent: 6734038 (2004-05-01), Shtein et al.
patent: 6740900 (2004-05-01), Hirai
patent: 2002/0155729 (2002-10-01), Baldwin et al.
patent: 2003/0183915 (2003-10-01), Scheifers et al.
patent: 2004/0077122 (2004-04-01), Wu et al.

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