Thyristor with continuous recombination center shunt across plan

Details Thyristor with continuous recombination center shunt across plan Thyristor with continuous recombination center shunt across plan

1979-08-31

1981-09-22

Clawson, Jr., Joseph E.

357 38, 357 91, H01L 29167

Patent

active

042913292

ABSTRACT:
A four-layer semiconductor thyristor including a planar recombination region extending on both sides of a planar cathode-emitter junction.

REFERENCES:
patent: 3309585 (1967-03-01), Forrest
patent: 3625781 (1971-12-01), Joshi et al.
patent: 3810791 (1974-05-01), Kendall
patent: 3888701 (1975-06-01), Iarneja et al.
patent: 3933527 (1976-01-01), Iarneja et al.
patent: 4056408 (1977-11-01), Bartko et al.
A. Fowler, "Cumulative Photovoltaic Device", IBM Tech. Discl. Bull., vol. 4, #10, Mar. 1962, p. 61.

Affiliated with

Also associated with

Rating

Thyristor with continuous recombination center shunt across plan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thyristor with continuous recombination center shunt across plan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thyristor with continuous recombination center shunt across plan will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-338265