MOS Devices

Details MOS Devices MOS Devices

1980-01-23

1981-09-22

Edlow, Martin H.

357 16, 357 23, H01L 2934

Patent

active

042913276

ABSTRACT:
An oxide layer (16') is formed on a GaAs body (14) by epitaxially growing a layer (12) of Al.sub.x Ga.sub.1-x As layer on a major surface (18) of the body and then thermally oxidizing the Al.sub.x Ga.sub.1-x As layer for a time period effective to convert it to an oxide. The oxidizing process is essentially self-terminating at the major surface 18. The application of this process to the fabrication of MOS capacitors and IGFETs is described.

REFERENCES:
patent: 4160261 (1979-07-01), Casey
patent: 4170666 (1979-10-01), Pancholy et al.
patent: 4172906 (1979-10-01), Pancholy
Murarka, Appl Phys. Letters, vol. 26, No. 4, Feb. 15, 1975, pp. 180-181.
Chang, Appl. Phys. Lett., vol. 29, No. 1, Jul. 1, 1976, pp. 56-58.
Casey, Jr., Appl. Phys. Lett., vol. 32, No. 10, May 15, 1978, pp. 678-679.

Affiliated with

Also associated with

Rating

MOS Devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS Devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS Devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-338229