Method for producing an antifuse in a substrate and an...

Details Method for producing an antifuse in a substrate and an... Method for producing an antifuse in a substrate and an...

2005-07-19

2005-07-19

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S467000, C438S600000, C257S050000, C257S530000

Reexamination Certificate

active

06919234

ABSTRACT:
Method for producing an antifuse in a substrate, a first interconnect being applied to the substrate, a dielectric layer being applied at an end face of the first interconnect, which end face essentially runs vertically with respect to the substrate, a second interconnect being applied in such a way that it adjoins the dielectric layer with an end face, with the result that an antifuse structure is formed.

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patent: 500 034 (1992-08-01), None
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German Examination Report dated Jun. 27, 2003.

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