Semiconductor power device having second breakdown protection

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357 13, 357 34, 357 86, H01L 2972

Patent

active

042913241

ABSTRACT:
A semiconductor power device comprises a semiconductor pellet having first and second opposing major surfaces, including, in series, emitter, base and collector regions of alternate conductivity type. The collector region is substantially planar and adjacent to the second surface, the base region is adjacent to the collector region and extends to the first surface, and the emitter region extends relatively deeply into the pellet from the first surface and is substantially surrounded by the base region. The emitter region substantially surrounds a substantially centrally located extension of the base region, this extension being of relatively high resistance and also terminating at the first surface. An emitter electrode contacts the emitter region and the base region extension, a collector electrode contacts the collector region, and a base electrode contacts the base region.

REFERENCES:
patent: 2836995 (1974-09-01), Wheatley
patent: 3337782 (1967-08-01), Todaro
patent: 3358197 (1967-12-01), Scarlett
patent: 3740621 (1973-06-01), Carley
patent: 3936863 (1976-02-01), Olmstead
patent: 4017882 (1977-04-01), Kannam
patent: 4231059 (1980-10-01), Hower et al.
patent: 4253105 (1981-02-01), Olmstead et al.

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