Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-04-12
2005-04-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S764000, C257S762000, C257S774000, C257S752000, C257S753000, C257S754000, C257S761000, C436S169000, C436S169000, C436S169000
Reexamination Certificate
active
06879042
ABSTRACT:
In a semiconductor device, an interlevel insulating film formed between a Cu interconnection, formed by damascene, and an upper metal interconnection layer on it has a multilayered structure made up of a Cu diffusion preventive insulating layer and another insulating film. The Cu diffusion preventive insulating layer has a multilayered structure made up of not less than two layers. A method for manufacturing the semiconductor device is also disclosed.
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Matsui Takayuki
Ohto Koichi
Erdem Fazli
Flynn Nathan J.
NEC Electronics Corporation
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