Semiconductor device and method and apparatus for...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S764000, C257S762000, C257S774000, C257S752000, C257S753000, C257S754000, C257S761000, C436S169000, C436S169000, C436S169000

Reexamination Certificate

active

06879042

ABSTRACT:
In a semiconductor device, an interlevel insulating film formed between a Cu interconnection, formed by damascene, and an upper metal interconnection layer on it has a multilayered structure made up of a Cu diffusion preventive insulating layer and another insulating film. The Cu diffusion preventive insulating layer has a multilayered structure made up of not less than two layers. A method for manufacturing the semiconductor device is also disclosed.

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