CMOS voltage bandgap reference with improved headroom

Details CMOS voltage bandgap reference with improved headroom CMOS voltage bandgap reference with improved headroom

2005-04-26

2005-04-26

Han, Jessica (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

C327S542000

Reexamination Certificate

active

06885178

ABSTRACT:
A voltage bandgap reference voltage circuit is provided. The circuit includes an amplifier having a first and second transistor coupled to the inputs of the amplifier. The circuit is adapted to operate with lower headroom by effecting a subtraction of a voltage substantially equivalent to Delta Vbe of the first and second transistors from the voltage applied to the common input of the amplifier.

REFERENCES:
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patent: 6529066 (2003-03-01), Guenot et al.
International Search Report from corresponding International Application No. PCT/US03/41254 filed Dec. 24, 2003.
Brokaw, A.P., “A simple three-terminal IC bandgap reference”, IEEE Journal of Solid-State Circuits, vol. SC-9, No. 6, Dec. 1974, pp. 388-393. (copy as is -sent with search report).
Ka Nag Leung et al., A sub-1-V 15-ppm/degrees C Cmos bandgap voltage reference without requiring low threshold voltage device, IEEE Journal of Solid-State Circuits, vol. 37, No. 4, Apr. 2002 pp. 526-530. XP002286296.
Timothy Lo and K. Phang,Low Voltage Low Power CMOS Bandgap References, University of Toronto, Dec. 21, 2001.

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