Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2005-01-25
2005-01-25
Elms, Richard (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S052000, C257S057000, C257S059000, C257S288000
Reexamination Certificate
active
06847064
ABSTRACT:
A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
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Divisional Application based on 10/011,708, filed May 8, 2002, entitledMethod of Manufacturing a Semiconductor Device, Hongyong Zhang et al.
Kusumoto Naoto
Zhang Hongyong
Elms Richard
Menz Douglas
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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