Method of forming angled implant for trench isolation

Details Method of forming angled implant for trench isolation Method of forming angled implant for trench isolation

2005-09-27

2005-09-27

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S433000, C438S447000, C438S449000

Reexamination Certificate

active

06949445

ABSTRACT:
A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of dopants of the first conductivity type. The sidewall and bottom implanted region located adjacent the trench isolation reduces surface leakage and dark current.

REFERENCES:
patent: 5291049 (1994-03-01), Morita
patent: 5498564 (1996-03-01), Geissler et al.
patent: 5801082 (1998-09-01), Tseng
patent: 5960276 (1999-09-01), Liaw et al.
patent: 6218691 (2001-04-01), Chung et al.
patent: 6326655 (2001-12-01), Suzuki
patent: 2001/0050382 (2001-12-01), Rhodes et al.
patent: 2002/0171097 (2002-11-01), Chen et al.
patent: 2003/0096443 (2003-05-01), Hwang
patent: 2004/0094784 (2004-05-01), Rhodes et al.
patent: 1 028 470 (2000-08-01), None
patent: WO 99/25018 (1999-05-01), None

Affiliated with

Also associated with

Rating

Method of forming angled implant for trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming angled implant for trench isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming angled implant for trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3375729