Hetero-junction bipolar transistor and a manufacturing...

Details Hetero-junction bipolar transistor and a manufacturing... Hetero-junction bipolar transistor and a manufacturing...

2005-04-26

2005-04-26

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S646000

Reexamination Certificate

active

06885042

ABSTRACT:
This invention provides a hetero-junction bipolar transistor (HBT) having a large base-collector breakdown voltage. The HBT has a collector, a base and an emitter. The emitter is made of a semiconductor material whose band gap energy is greater than that of the base. An passivation layer made of a semiconductor material cover the collector, the base and the emitter and the band gap energy of the passivation layer is greater than that of the collector and the base.

REFERENCES:
patent: 5001534 (1991-03-01), Lunardi et al.
patent: 5712504 (1998-01-01), Yano et al.
patent: 6031255 (2000-02-01), Delage et al.
patent: 6593635 (2003-07-01), Yanagisawa et al.
Tokumitsu et al, “Reduction of the Surface . . . Passivation Layer”, Dec. 1989, vol. 10, No. 12, IEEE Elecron Device Letters pp. 585-587.*
Copending U.S. Appl. No. 10/370,604, filed Feb. 24, 2003.
Won-Seong Lee, et al., Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors, IEEE Electron Device Letters, vol. 10, No. 5, May 1989, pp. 200-202.

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