Semiconductor memory device having a burst continuous read...

Details Semiconductor memory device having a burst continuous read... Semiconductor memory device having a burst continuous read...

2005-04-05

2005-04-05

Lam, David (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S200000, C365S194000

Reexamination Certificate

active

06876580

ABSTRACT:
Several sense amplifiers detect data read from a memory cell of a bank in accordance with read address. Several first holding circuits individually hold data output from the sense amplifiers. Several second holding circuits hold data output from the corresponding first holding circuit after being delayed by time that the read address gains with respect to the burst address. Decoders individually supply data held in several second holding circuits to the corresponding line of a bus line.

REFERENCES:
patent: 5319759 (1994-06-01), Chan
patent: 5892713 (1999-04-01), Jyouno et al.
patent: 2001-167593 (2001-06-01), None

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