Self-repair method via ECC for nonvolatile memory devices,...

Details Self-repair method via ECC for nonvolatile memory devices,... Self-repair method via ECC for nonvolatile memory devices,...

2005-05-31

2005-05-31

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185090, C365S185280, C365S185290

Reexamination Certificate

active

06901011

ABSTRACT:
The method for using a nonvolatile memory (1) having a plurality of cells (14), each of which stores a datum, is based upon the steps of performing an modification operation of erasing/programming (22) the data of the memory; verifying (23) the correctness of the data of the memory cells; and, if the step of verifying (23) has revealed at least one incorrect datum, correcting on-th-field (46) the incorrect datum, using an error correcting code. The verification (23) of the correctness of the data is performed by determining (23) the number of memory cells storing an incorrect datum; if the number of memory cells storing the incorrect datum is less than or equal to a threshold (46), the erroneous datum is corrected by the error correction code; otherwise, new erasing/programming pulses are supplied.

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