Semiconductor light emitting device and its manufacturing...

Details Semiconductor light emitting device and its manufacturing... Semiconductor light emitting device and its manufacturing...

2005-03-22

2005-03-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S086000, C257S087000, C257S094000, C257S099000, C257S103000

Reexamination Certificate

active

06870193

ABSTRACT:
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer9and a p-type second layer12that are deposited sequentially from nearer to remoter from the active layer. The first layer9is not thinner than 50 nm. The p-type second layer12includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.

REFERENCES:
patent: 5594750 (1997-01-01), Zhang et al.
patent: 5959307 (1999-09-01), Nakamura et al.
patent: 6542528 (2003-04-01), Sato et al.
patent: 9-219556 (1997-08-01), None

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