Low k film application for interlevel dielectric and method...

Details Low k film application for interlevel dielectric and method... Low k film application for interlevel dielectric and method...

2005-05-10

2005-05-10

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

Reexamination Certificate

active

06890865

ABSTRACT:
Methods of selectively removing post-etch polymer material and dielectric antireflective coatings (DARC) without substantially etching an underlying carbon-doped low k dielectric layer, and compositions for the selective removal of a DARC layer and post-etch polymer material are provided. A composition comprising trimethylammonium fluoride is used to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer at an etch rate of the antireflective coating layer to the low k dielectric layer that is greater than the etch rate of the antireflective coating to a TEOS layer. The method and composition are useful, for example, in the formation of high aspect ratio openings in low k (carbon doped) silicon oxide dielectric layers and maintaining the integrity of the dimensions of the formed openings during a cleaning step to remove a post-etch polymer and antireflective coating.

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