Semiconductor laser device in which near-edge portion of...

Details Semiconductor laser device in which near-edge portion of... Semiconductor laser device in which near-edge portion of...

2005-05-31

2005-05-31

Wong, Don (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

06901100

ABSTRACT:
In a semiconductor laser device: a p-type AlzGa1-zAs cladding layer is formed above an active layer, where z≧0.3; a p-type GaAs contact layer is formed on the cladding layer except for at least one near-edge portion of the cladding layer; and an electrode is formed on at least the contact layer. The upper surface of each of the at least one near-edge portion of the cladding layer is insulated, where each of the at least one near-edge portion of the cladding layer is located in a vicinity of one of opposite end facets perpendicular to the direction of laser emission.

REFERENCES:
patent: 5541950 (1996-07-01), Kizuki et al.
patent: 5563902 (1996-10-01), Xu et al.
patent: 5636234 (1997-06-01), Takagi
patent: 5661743 (1997-08-01), Nagai
patent: 5675601 (1997-10-01), Karakida et al.
patent: 5751754 (1998-05-01), Takagi
patent: 6563852 (2003-05-01), Baillargeon et al.

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