Nonvolatile semiconductor memory and manufacturing method...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257S355000, C257S315000, C257S316000

Reexamination Certificate

active

06891246

ABSTRACT:
A nonvolatile semiconductor memory includes a trench isolation provided in a semiconductor substrate and an interlayer insulator provided on the semiconductor substrate. The trench isolation defines an active area extending in a first direction at the semiconductor substrate. The interlayer insulator has a wiring trench extending in a second direction intersecting the first direction. A first conductive material layer is provided at the cross-point of the active area and the wiring trench so that it is insulated from the active area. A second conductive material layer is provided in the wiring trench so that it is insulated from the first conductive material layer. A metal layer is provided in the wiring trench so that it is electrically in contact the second conductive material layer.

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S. Aritome, et al., “A 0.67um2Self-Aligned Shallow Trench Isolation Cell(SA-STI Cell) for 3V-Only 256Mbit NAND EEPROMs”, IEDM, 1994, pp. 61-64.

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