Method of patterning photoresist on a wafer using an...

Details Method of patterning photoresist on a wafer using an... Method of patterning photoresist on a wafer using an...

2005-04-05

2005-04-05

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06875546

ABSTRACT:
An attenuated phase shift mask (10or20) includes a substrate (12or22) and an attenuation stack (11or21) overlying the substrate. The attenuation stack includes a chromium layer or ruthenium layer (14or24) overlying the substrate, a tantalum silicon oxide layer (16or26) overlying the chromium layer or the ruthenium layer, and a tantalum silicon nitride layer (18or28) overlying the tantalum silicon oxide layer. The attenuation stack may also include a layer (30) between the substrate (22) and the chromium or ruthenium layer (24). In one embodiment, this layer is a portion of the substrate. The attenuation stack is used to pattern photoresist (50) on a semiconductor wafer. In one embodiment, portions of the substrate adjacent the attenuation stack has a transmission of greater than 90 percent and the attenuation stack has a transmission of 5 to 20 percent at the exposure wavelength. In one embodiment, an inspection contrast between the substrate and the attenuation stack at an inspection wavelength is greater than 75 percent.

REFERENCES:
patent: 5052033 (1991-09-01), Ikeda
patent: 5286581 (1994-02-01), Lee
patent: 6410193 (2002-06-01), Stivers
patent: 20040126670 (2004-07-01), Liang et al.
patent: 20040131948 (2004-07-01), Yan
patent: WO 0042473 (2000-07-01), None
Yokoyama et al., “The Development of Bilayered TaSiOx-HTPSM (1),” Proceedings of SPH vol. 4409 (2001), pp. 164-171.
Yokoyama et al., “The Development of Bilayered TaSiOx-HTPSM (2),” Proceedings of SPH vol. 4409 (2001), pp. 164-171.

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