Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-11-21
1992-07-14
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 3700
Patent
active
051305470
ABSTRACT:
A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer. The improvement comprises the steps of (a) holding mask information data, which are information for deflecting the charged particle beam to the selected mask pattern and in which an index is provided every mask pattern of the stencil mask, in a mask memory, (b) holding pattern exposure data, which are information for designating a mask pattern by the use of the index of each mask pattern held in the mask memory and for deflecting the charged particle beam shaped with the designated mask pattern to a predetermined region on the wafer, in a data memory; and (c) deflecting the charged particle beam of the stencil mask and shaping the beam by the use of the mask information data outputted from the mask memory in response to the index designated in the pattern exposure data.
REFERENCES:
patent: 3876883 (1975-04-01), Broers et al.
patent: 3956635 (1976-05-01), Chang
patent: 4213053 (1980-07-01), Pfeiffer
patent: 4243866 (1981-01-01), Pfeiffer et al.
patent: 5008830 (1991-04-01), Moriizumi et al.
Electronics and Electrothemics and Metallurgy Division, Proceedings on the Symposium on Electron and Ion Beam Science and Technology, Apr. 13, 1979, pp. 149-159, Princeton, N.J.
Fueki Shunsuke
Oae Yoshihisa
Sakamoto Kiichi
Yamada Akio
Yasuda Hiroshi
Berman Jack I.
Fujitsu Limited
Nguyen Kiet T.
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