Selective chemical vapor deposition of aluminum, aluminum CVD ma

Details Selective chemical vapor deposition of aluminum, aluminum CVD ma Selective chemical vapor deposition of aluminum, aluminum CVD ma

1991-06-10

1992-07-14

Dees, Jose G.

Organic compounds -- part of the class 532-570 series

Organic compounds

Aluminum containing

556187, C07F 506

Patent

active

051304597

ABSTRACT:
This invention provides a process for forming with high selectivity an Al film having good electrical conductivity at the uncoated portions of a substrate coated with a masking material by means of chemical vapor deposition, using an Al selective deposition material having good electrical conductivity without subjecting it preliminarily to cracking, characterized in that the process employs a molecular compound of trimethyl aluminum and dimethyl aluminum hydride as a starting material gas. This invention also provides an Al selective CVD material characterized in that it is an organic Al compound represented by the following formula:

REFERENCES:
patent: 3445493 (1969-05-01), Harwell
patent: 3453093 (1969-07-01), Kobetz et al.

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