Fishing – trapping – and vermin destroying
Patent
1990-10-09
1992-07-14
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 70, 437984, 148DIG70, H01L 21302, H01L 2176
Patent
active
051302713
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, selectively removing the insulating film to expose a surface of the semiconductor substrate, doping an impurity in the semiconductor substrate using the selectively formed insulating film as a mask, thereby forming an impurity region of one conductivity type, forming a photoresist film on the entire surface of the semiconductor substrate in an area including the insulating film used as the mask, selectively removing only the photoresist film on the insulating film to leave the photoresist film on only the impurity region of one conductivity type, removing the insulating film at a portion from which the photoresist film is removed, thereby exposing the surface of the semiconductor substrate, and doping an impurity using a remaining photoresist as a mask to form an impurity region of the other conductivity type in the exposed surface of the semiconductor substrate.
REFERENCES:
patent: 4558508 (1985-12-01), Kinney et al.
patent: 4584027 (1986-04-01), Metz, Jr.
patent: 4600445 (1986-07-01), Horr et al.
patent: 4956306 (1990-09-01), Fuller et al.
Ghandhi, S. K., VLSI Fabrication Principles, pp. 542-550, 1983.
Chaudhari C.
Hearn Brian E.
NEC Corporation
LandOfFree
Method of manufacturing a semiconductor device having no step at does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device having no step at, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device having no step at will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-334469