Split metal plate capacitor and method for making the same

Details Split metal plate capacitor and method for making the same Split metal plate capacitor and method for making the same

1991-10-28

1992-07-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437192, 437200, 437919, H01L 2170

Patent

active

051302675

ABSTRACT:
A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the capacitor dielectric is deposited thereover. A first metal layer, such as titanium nitride or a titanium-tungsten alloy, is formed over the capacitor dielectric, and is patterned and etched to define the top plate of the capacitor and, accordingly, the capacitor size. Multilevel dielectric is formed thereover, and a contact via to the top plate is etched therethrough. Metallization is sputtered overall, to make contact to the top plate and elsewhere in the circuit.

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