Method for photolithographically forming a selfaligned mask usin

Details Method for photolithographically forming a selfaligned mask usin Method for photolithographically forming a selfaligned mask usin

1990-04-17

1992-07-14

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437101, 437229, 430311, 430317, 430319, 430395, H01L 21336, H01L 21312, G03C 516

Patent

active

051302632

ABSTRACT:
A method for photolithographically forming a mask includes the steps of: forming an island structure of opaque material on a principal surface of a transparent substrate; depositing at least one layer of transparent material on the principal substrate surface and over the island structure; depositing a layer of photoresist material over the at least one transparent layer; exposing a back-side substrate surface, opposite to the principal substrate surface, to UV light to cause exposure of at least a portion of the photoresist, corresponding substantially to an area outside of a shadow of the island structure; reflecting at least a portion of UV light back into the photoresist layer, by depositing a non-specular layer over the photoresist layer before UV exposure, to expose another portion of the photoresist layer a selected overlap distance within the island structure shadow; and removing the exposed photoresist portion to form a mask which is aligned with the island structure and narrower than the island structure by the selected overlap distance on each side thereof.

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K. Asama et al., "A Self-Alignment Processed a-Si TFT Matrix Circuit for LCD Panels", SID 83 Digest, pp. 144-145.
B. Diem et al., "a-Si:H TFT:Potential Suitabilities for Gate and Source-Drain Self-Aligned Structure", Mat. Res. Soc. Symp. Proc., vol. 33, pp. 281-285 (1984), Elsevier Science Pub. Co., Inc.

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