Stock material or miscellaneous articles – Structurally defined web or sheet – Discontinuous or differential coating – impregnation or bond
Patent
1991-08-30
1992-07-14
Ryan, Patrick J.
Stock material or miscellaneous articles
Structurally defined web or sheet
Discontinuous or differential coating, impregnation or bond
4284111, 428457, 428688, 428700, 428901, 2505781, 357 236, 357 70, B32G 900
Patent
active
051301032
ABSTRACT:
Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of the deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.
REFERENCES:
patent: 4052782 (1977-10-01), Weinstein et al.
patent: 4216037 (1980-08-01), Katoda et al.
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4800527 (1989-01-01), Ozaki et al.
patent: 4866291 (1989-09-01), Shimada et al.
Journal of Applied Physics, vol. 58, No. 7, Oct. 1985, pp. 2767-2769, American Institute of Physics, Woodbury, New York, S. Oku et al. "InP crystal growth planar SiO.sub.2 substrates".
British Journal of Applied Physics, vol. 18, No. 10, Oct. 1967, pp. 1357-1382, GB, J. D. Filby et al. "Single-crystal films of silicon on insulators".
Arao Kozo
Kumomi Hideya
Tokunaga Hiroyuki
Yamagata Kenji
Canon Kabushiki Kaisha
Lee Kam F.
Ryan Patrick J.
LandOfFree
Method for forming semiconductor crystal and semiconductor cryst does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming semiconductor crystal and semiconductor cryst, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming semiconductor crystal and semiconductor cryst will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-333330