Wafer cleaning method

Details Wafer cleaning method Wafer cleaning method

1990-01-08

1992-07-14

Morris, Theodore

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 26, 134 27, 134 28, B08B 308, C23G 102

Patent

active

051299550

ABSTRACT:
A surface of a silicon wafer is treated with hydrogen fluoride. Subsequently, the surface is cleaned with choline, choline-derivative and/or tetraalkyl ammonium hydroxide. Impurities are removed from the surface by cations from the cleaning agent. Further, hydroxyl groups from the cleaning agent cause the surface to become hydrophilic, preventing the formation of droplets which would otherwise roll along and contaminate the surface.

REFERENCES:
patent: 4239661 (1980-12-01), Muraoka et al.
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4339340 (1982-07-01), Muraoka et al.

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