Patent
1989-06-28
1990-09-25
James, Andrew J.
357 234, 357 43, H01L 2974
Patent
active
049597035
ABSTRACT:
A turn-on/off driving technique for an insulated gate thyristor which has a first gate electrode insulatively provided above a first base layer and fuctioning as a gate of MOSFET, and a second gate electrode formed on the second base layer. To drive the turn-on of the thyristor, a first voltage for rendering the MOSFET conductive is applied to the first gate electrode, while substantially simultaneously a second voltage for producing forward biasing between the second base layer and a second emitter layer is applied to the second gate electrode. To turn-off drive the thyristor, a third voltage for reverse biasing between the second emitter layer and the second base layer to stop the operation of the thyristor is applied to the second gate, while the MOSFET is kept conductive. The thyristor starts turning off in response to the voltage application. At this time, charge carriers exhausted from the second emitter layer are allowed to flow into the first base layer through the channel region of the MOSFET, thereby suppressing the local concentration of the turn-off current in the thyristor.
REFERENCES:
patent: 4331969 (1982-05-01), Baliga
patent: 4466010 (1984-08-01), Patalong
patent: 4604638 (1986-08-01), Matsuda
patent: 4691223 (1987-09-01), Murakami et al.
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4825274 (1989-04-01), Higuchi et al.
patent: 4901131 (1990-02-01), Takahashi
patent: 4912541 (1990-03-01), Baliga et al.
"Comparison of High Voltage Devices for Power ICs", R. Jayaraman et al., IEDM 84, pp. 258-261, 10.1.
Nakagawa Akio
Ogura Tsuneo
James Andrew J.
Kabushiki Kaisha Toshiba
Monin Don
LandOfFree
Turn-on/off driving technique for insulated gate thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Turn-on/off driving technique for insulated gate thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Turn-on/off driving technique for insulated gate thyristor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-331975