Insulated gate field effect transistor and its manufacturing met

Details Insulated gate field effect transistor and its manufacturing met Insulated gate field effect transistor and its manufacturing met

1988-02-03

1990-09-25

Wojciechowicz, Edward J.

357 2, 357 4, 357 59, 357 60, 357 91, H01L 2978

Patent

active

049597000

ABSTRACT:
An insulated gate filed effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulated film is disposed between said gate electrode and said semiconductor layer. A non-single-crystalline channel region is defined within said semiconductor layer just below said gate electrode. A source region and a drain region are transformed from and defined within said semiconductor layer immediately adjacent to said channel region in an opposed relation, said source and drain regions being crystallized to a higher degree than that of said channel region by selectively irradiating portions of said semiconductor layer using said gate electrode as a mask.

REFERENCES:
patent: 4272880 (1981-06-01), Pashley
patent: 4470060 (1984-09-01), Yamakazi
patent: 4476475 (1984-10-01), Naem et al.
patent: 4598304 (1986-07-01), Tanaka et al.

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