Multilayer electrodes for integrated circuit capacitors

Details Multilayer electrodes for integrated circuit capacitors Multilayer electrodes for integrated circuit capacitors

1989-06-20

1991-04-02

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 357 51, H01G 101, H01L 300, H01L 2702

Patent

active

050051024

ABSTRACT:
Disclosed is a multilayer capacitor structure in an integrated circuit, including a first electrode constructed by forming at least one layer over a substrate and forming a plate layer over the previous layer(s). A dielectric layer is formed over this first electrode, and a second electrode is established over the dielectric layer by forming a plate layer over the dielectric layer, and forming at least one additional layer over the plate layer. Each layer may serve one or more functions. Also disclosed is a further embodiment including constructing a first electrode by forming at least one layer on a substrate, forming a plate layer over the previous layer(s), and forming a dielectric layer over the first electrode. The resulting structure is then heated, preferably in an oxygen ambient, to oxidize the lower layer. A second electrode can then be formed over the dielectric layer.

REFERENCES:
patent: 3579063 (1971-05-01), Wasa et al.
patent: 3668484 (1972-06-01), Greig et al.
patent: 3699409 (1972-10-01), Feversanger et al.
patent: 4849801 (1989-07-01), Honjyo et al.
R. D. Huttermann et al., "Silicon Tantalum Integrated Circuit Processing," 31st Electronic Components Conference, May 11-13, 1981, Colony Square Hotel, Atlanta, Georgia, paragraphs 1-2, FIG. 2.
J. K. Howard, "Capacitor Structure for Bipolar Memory Device," IBM Technical Disclosure Bulletin, 5/81, pp. 5373-5374.
"TEM studies during development of a 4-megabit DRAM," Microscopy of Semiconducting Materials, 1987, Proceedings of the Institute of Physics Conference, Oxford, UK, 6-8, April 1987, abstract, paragraph 5.
I. Stoev and F. Schumacher, "Preparation and RF Properties of MIS Mesa Varacters", Journal of the Asia Electronics Union, 8/7/73, abstract, paragraphs 1-2.

Affiliated with

Also associated with

Rating

Multilayer electrodes for integrated circuit capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer electrodes for integrated circuit capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer electrodes for integrated circuit capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-330275