Semiconductor device having damascene interconnects

Details Semiconductor device having damascene interconnects Semiconductor device having damascene interconnects

1996-11-01

1998-01-13

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257760, 257763, 257764, 257768, 257774, H01L 2348, H01L 2352, H01L 2940

Patent

active

057083037

ABSTRACT:
This is a device and method of optimizing capacitance and performance for multilevel interconnects. The device comprising: a semiconductor layer 70; a first high-k layer 68 above the semiconductor layer; a first insulating layer 66 above the first high-k layer 68; an interconnect layer 58 above the first insulating layer 66; a second insulating layer 64 around the interconnect layer 58; and a second high-k layer 52 above the second insulating layer 64 and the interconnect layer 58. The device may have a low-k material inserted between closely spaced metal interconnects. Alternatively, the device may have air gaps between closely spaced metal interconnects. In addition, the first high-k layer may be used as an oxide etch stop.

REFERENCES:
patent: 4613888 (1986-09-01), Mase et al.
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 5216281 (1993-06-01), Butler
patent: 5319246 (1994-06-01), Nagamine et al.
patent: 5345108 (1994-09-01), Kikkawa

Affiliated with

Also associated with

Rating

Semiconductor device having damascene interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having damascene interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having damascene interconnects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-329151