Multichip press-contact type semiconductor device

Details Multichip press-contact type semiconductor device Multichip press-contact type semiconductor device

1996-05-30

1998-01-13

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Device held in place by clamping

257181, 257688, 257719, 257785, 257723, H01L 2974, H01L 2342, H01L 2348

Patent

active

057082995

ABSTRACT:
IGBT chips and FRD chips are arranged on the same plane so as to be press-contacted by an emitter press-contact electrode plate and a collector press-contact electrode plate at the same time. The FRD chips are arranged at a central portion, and the IGBT chips are arranged at the peripheral portion of the FRD chips. A resin substrate having an opening in its contact portion between a main surface of each of said chip and the emitter press-contact electrode plate is provided between both press-contact electrode plates. Gate press-contact electrodes are formed on the resin substrate to be electrically connected to a gate electrode of each of the IGBT chips. Also, gate wires are fixed to the resin substrate to supply a control signal for controlling the IGBT chips to the gate electrode of the IGBT chips from the gate wires through the gate press-contact electrode.

REFERENCES:
patent: 4918514 (1990-04-01), Matsuda et al.
patent: 4958215 (1990-09-01), Kojima et al.
patent: 4996586 (1991-02-01), Matsuda et al.
patent: 5140406 (1992-08-01), Matsuda et al.
patent: 5221851 (1993-06-01), Gobrecht et al.
patent: 5250821 (1993-10-01), Ferla et al.
patent: 5360984 (1994-11-01), Kirihata
patent: 5360985 (1994-11-01), Hiyoshi et al.
patent: 5459356 (1995-10-01), Schulze et al.
patent: 5469103 (1995-11-01), Shigekane
patent: 5519231 (1996-05-01), Nakashima et al.

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