Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1979-05-29
1981-09-22
Weisstuch, Aaron
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 148 15, H01L 2100
Patent
active
042901855
ABSTRACT:
A MOSFET random access memory having an extremely low current load memory cell is disclosed. The memory cell comprises a cross-coupled binary stage in which one or more paths to ground can be selectively switched on or off through true and complement data nodes. Impedance means connect a power supply node to the data nodes for charging the data nodes to predetermined voltage levels. The impedance means comprise an intrinsic-extrinsic junction of a substantially pure, intrinsic semiconductor material and a diffusion of extrinsic conductivity impurities disposed within a region of the intrinsic semiconductor material. The impedance means is formed by an isoplanar silicon gate process as an integral portion of a polycrystalline silicon strip which interconnects the power supply node to a data node. A portion of the polycrystalline silicon strip is extended from the data node to form the gate of the transistor to which it is cross-coupled.
REFERENCES:
patent: 3560764 (1971-02-01), McDowell
patent: 3576478 (1971-04-01), Watkins et al.
patent: 3986173 (1976-10-01), Baitlinger et al.
Chan Tsiu C.
McKenny Vernon G.
Mostek Corporation
Weisstuch Aaron
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