Process for forming a fine pattern having a high aspect ratio

Details Process for forming a fine pattern having a high aspect ratio Process for forming a fine pattern having a high aspect ratio

1990-05-25

1991-04-02

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250309, H01J 37302, H01J 37304

Patent

active

050049275

ABSTRACT:
A fine pattern having a high aspect ratio is precisely formed using a focused-ion beam system by depositing a pattern, detecting an image of the deposited pattern, comparing the image of the deposited pattern to data for a pattern to be formed, depositing again, if necessary, to form a portion of the deposited to be formed but omitted from the deposited pattern, and removing an excess portion of the deposited pattern or the further deposited portion.

REFERENCES:
patent: 4503329 (1985-03-01), Yamaguchi et al.
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4874947 (1989-10-01), Ward et al.
patent: 4908226 (1990-03-01), Kubena et al.
Cambria, T. D. et al., "Mask and Circuit Repair with Focused-Ion Beams", Solid State Technology, vol. 30, No. 9, Sep. 1987, Port Washington, NY, pp. 133-136.
H. Betz & A. Heuberger "Influence of Sputter Effects on the Resolution in X-Ray Mask Repair", (SPIE, vol. 632, pp. 67-75, 1986).
Y. Ochiai, S. Matsui & K. Mori "Focused Ion Beam Technology", (Solid State Technology, pp. 75-78, Nov. 1987).

Affiliated with

Also associated with

Rating

Process for forming a fine pattern having a high aspect ratio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming a fine pattern having a high aspect ratio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming a fine pattern having a high aspect ratio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-328292